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1064nmAPD imwe chubhu yakatevedzana

1064nmAPD imwe chubhu yakatevedzana

Muenzaniso: GD5210Y-3-500 / GD5210Y-3-800 / GD5211Y

Tsanangudzo Pfupi

Chishandiso ichi silicon avalanche photodiode, mhinduro inotaridzika inotangira pachiedza chinooneka kusvika pedyo-infrared, peak response wavelength i980nm, uye mhinduro pa1064nm inogona kusvika 36A/W.


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Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric maitiro (@Ta=22±3)

Model

GD5210Y-3-500

GD5210Y-3-800

GD5211Y

Pakeji fomu

TO-46

TO-46

TO-52

Photosensitive pamusoro dhayamita (mm)

0.5

0.8

0.8

Spectral response range (nm)

400 ~ 1100

400 ~ 1100

400 ~ 1100

Peak response wavelength (nm)

980

980

980

Kupindura

λ=905nm Φ=1μW

M=100

58

58

58

λ=1064nm Φ=1μW

M=100

36

36

36

Rima ikozvino

M=100(nA)

Typical

2

4

10

Maximum

20

20

20

Nguva yekupindura λ=800nm ​​R1=50Ω(ns)

2

3

3.5

 

Kushanda voltage tembiricha coefficient T= -40 ℃ ~ 85 ℃ (V/℃)

2.2

2.2

2.2

Huwandu hwekuita M=100 f=1MHz(pF)

1.0

1.5

3.5

Breakdown voltage

IR=10μA(V)

Minimum

220

220

350

Maximum

580

580

500

Front Plane Chip Structure

High mhinduro frequency

Kuwana kwakakwirira

Laser kureba

Lidar

Laser yambiro


  • Zvakapfuura:
  • Zvinotevera:

  • Front Plane Chip Structure

    High mhinduro frequency

    Kuwana kwakakwirira

    Laser kureba

    Lidar

    Laser yambiro