800nm APD
Features
- Frontside yakavhenekerwa flat chip
- High-speed mhinduro
- High APD kuwana
- Low junction capacitance
- Noise yakaderera
Applications
- Laser kutenderera
- Laser radar
- Laser yambiro
Photoelectric parameter(@Ta=22±3℃）
| chinhu # | Package category | Diameter ye photosensitive surface (mm) | Spectral response range(nm) |
Peak response wavelength | Responsivity λ=800nm φe=1μW M=100 (A/W) | Nguva yekupindura λ=800nm RL=50Ω (ns) | Rima ikozvino M=100 (nA) | Temperature Coefficient Ta=-40℃～85℃ (V/℃)
| Total capacitance M=100 f=1MHz (pF)
| Breakdown voltage IR=10μA (V) | ||
| Typ. | Max. | Min | Max | |||||||||
| GD5210Y-1-2-TO46 | TO-46 | 0.23 |
400～1100
|
800 |
55
|
0.3 | 0.05 | 0.2 | 0.5 | 1.5 | 80 | 160 |
| GD5210Y-1-5-TO46 | TO-46 | 0.50 | 0.10 | 0.4 | 3.0 | |||||||
| GD5210Y-1-2-LCC3 | LCC3 | 0.23 | 0.05 | 0.2 | 1.5 | |||||||
| GD5210Y-1-5-LCC3 | LCC3 | 0.50 | 0.10 | 0.4 | 3.0 | |||||||
