InGaAs APD Modules

Muenzaniso: GD6510Y/ GD6511Y/ GD6512Y

Tsanangudzo Pfupi

Iyo indium gallium arsenide avalanche photodiode module ine pre-amplification yedunhu inogonesa isina simba yazvino chiratidzo kuti ikwidziridzwe uye ichishandurwa kuita chiratidzo chemagetsi kuti iite shanduko yephoton-photoelectric-signal amplification.

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Technical Parameter

Product Tags

Features

Frontside yakavhenekerwa flat chip
High-speed mhinduro
High senitivity ye detector

Applications

Laser kutenderera
Laser kutaurirana
Laser yambiro

Photoelectric parameter(@Ta=22±3℃）

chinhu #	Package category	Diameter ye photosensitive surface (mm)	Spectral response range (nm)	Breakdown voltage (V)	Responsivity M=10 λ=1550nm (kV/W)	Kusimuka nguva (ns)	Bandwidth (MHz)	Temperature Coefficient T_a=-40℃～85℃ (V/℃)	Noise yakaenzana simba (pW/√Hz)	Concentricity (μm)	Yakatsiviwa mhando mune dzimwe nyika
GD6510Y	TO-8	0.2	1000~1700	30～70	340	5	70	0.12	0.15	≤50	C3059-1550-R2A
GD6511Y		0.5				10	35		0.21		−
GD6512Y		0.08				2.3	150		0.11		C3059-1550-R08B