800nmAPD imwe chubhu yakatevedzana
Photoelectric maitiro (@Ta=22±3℃) | |||||
Model | GD5210Y-1-2-T046 | GD5210Y-1-5-T046 | GD5210Y-1-2-LCC3 | GD5210Y-1-5 -LCC3 | |
Pakeji fomu | TO-46 | TO-46 | LCC3 | LCC3 | |
Photosensitive pamusoro dhayamita (mm) | 0.23 | 0.50 | 0.23 | 0.50 | |
Spectral response range (nm) | 400 ~ 1100 | 400 ~ 1100 | 400 ~ 1100 | 400 ~ 1100 | |
Peak response wavelength (nm) | 800 | 800 | 800 | 800 | |
λ=800nm Φ=1μW M=100(A/W) | 55 | 55 | 55 | 55 | |
Rima ikozvino | Typical | 0.05 | 0.10 | 0.05 | 0.10 |
M=100(nA) | Maximum | 0.2 | 0.4 | 0.2 | 0.4 |
Nguva yekupindura λ=800nm R1=50Ω(ns) | 0.3 | 0.3 | 0.3 | 0.3 | |
Kushanda voltage tembiricha coefficient T = -40 ℃ ~ 85 ℃ (V/℃) | 0.5 | 0.5 | 0.5 | 0.5 | |
Huwandu hwekuita M=100 f=1MHz(pF) | 1.5 | 3.0 | 1.5 | 3.0 | |
Breakdown voltage IR=10μA(V) | Minimum | 80 | 80 | 80 | 80 |
Maximum | 160 | 160 | 160 | 160 |
Front Plane Chip Structure
High speed mhinduro
Kuwana kwakakwirira
Low junction capacitance
Noise yakaderera
Laser kutenderera
Lidar
Laser yambiro