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800nmAPD imwe chubhu yakatevedzana

800nmAPD imwe chubhu yakatevedzana

Muenzaniso: GD5210Y-1-2-T046 / GD5210Y-1-5-T046 / GD5210Y-1-2-LCC3 / GD5210Y-1-5 -LCC3

Tsanangudzo Pfupi

Chishandiso ichi silicon avalanche photodiode, iyo inotaridzika mhinduro inotangira pachiedza chinooneka kusvika padhuze-infrared, uye peak mhinduro wavelength i800nm.


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Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric maitiro (@Ta=22±3)

Model

GD5210Y-1-2-T046

GD5210Y-1-5-T046

GD5210Y-1-2-LCC3

GD5210Y-1-5

-LCC3

Pakeji fomu

TO-46

TO-46

LCC3

LCC3

Photosensitive pamusoro dhayamita (mm)

0.23

0.50

0.23

0.50

Spectral response range (nm)

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

Peak response wavelength (nm)

800

800

800

800

λ=800nm ​​Φ=1μW M=100(A/W)

55

55

55

55

Rima ikozvino

Typical

0.05

0.10

0.05

0.10

M=100(nA)

Maximum

0.2

0.4

0.2

0.4

Nguva yekupindura λ=800nm ​​R1=50Ω(ns)

0.3

0.3

0.3

0.3

Kushanda voltage tembiricha coefficient T = -40 ℃ ~ 85 ℃ (V/℃)

0.5

0.5

0.5

0.5

Huwandu hwekuita M=100 f=1MHz(pF)

1.5

3.0

1.5

3.0

Breakdown voltage IR=10μA(V)

Minimum

80

80

80

80

Maximum

160

160

160

160


  • Zvakapfuura:
  • Zvinotevera:

  • Front Plane Chip Structure

    High speed mhinduro

    Kuwana kwakakwirira

    Low junction capacitance

    Noise yakaderera

    Laser kutenderera

    Lidar

    Laser yambiro