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905nmAPD imwe chubhu yakatevedzana

905nmAPD imwe chubhu yakatevedzana

Muenzaniso: GD5210Y-2-2-T046 / GD5210Y-2-5-T046 / GD5210Y-2-8-T046 / GD5210Y-2-2-LCC3 / GD5210Y-2-5-LCC3 / GD5210Y-2-2P GD5210Y-2-5-P

Tsanangudzo Pfupi

Chishandiso ichi silicon avalanche photodiode, iyo inotaridzika mhinduro inotangira pachiedza chinooneka kusvika padhuze-infrared, uye peak mhinduro wavelength i905nm.


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Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric maitiro (@Ta=22±3)

Model

GD5210Y-2-2-T046

GD5210Y-2-5-T046

GD5210Y-2-8-T046

GD5210Y-2-2-LCC3

GD5210Y-2-5-LCC3

GD5210Y-2-2-P

GD5210Y-2-5-P

Array

Pakeji fomu

TO-46

TO-46

TO-46

LCC3

LCC3

purasitiki kurongedza

purasitiki kurongedza

PCB

Photosensitive pamusoro dhayamita (mm)

0.23

0.50

0.80

0.23

0.50

0.23

0.50

customized

Spectral response range (nm)

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

400 ~ 1100

Peak response wavelength (nm)

905

905

905

905

905

905

905

905

Kupindura

λ=905nm Φ=1μW M=100 (A/W)

55

55

55

55

55

55

55

55

Rima ikozvino M=100(nA)

Typical

0.2

0.4

0.8

0.2

0.4

0.2

0.4

Maererano ne photosensitivity

Maximum

1.0

1.0

2.0

1.0

1.0

1.0

1.0

Rutivi rumwe

Nguva yekupindura

λ=905nm R1=50Ω(ns)

0.6

0.6

0.6

0.6

0.6

0.6

0.6

Maererano ne photosensitive surface

Kushanda voltage tembiricha coefficient T = -40 ℃ ~ 85 ℃ (V/℃)

0.9

0.9

0.9

0.9

0.9

0.9

0.9

0.9

Total capacitance

M=100 f=1MHz(pF)

1.0

1.2

2.0

1.0

1.2

1.0

1.2

 

Maererano ne photosensitive surface

breakdown voltage

IR=10μA(V)

Minimum

130

130

130

130

130

130

130

160

Maximum

220

220

220

220

220

220

220

200


  • Zvakapfuura:
  • Zvinotevera:

  • Front Plane Chip Structure

    High speed mhinduro

    Kuwana kwakakwirira

    Low junction capacitance

    Noise yakaderera

    Array size uye photosensitive nzvimbo inogona kugadzirwa

    Laser kutenderera

    Lidar

    Laser yambiro