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850nm Si PIN modules

850nm Si PIN modules

Muenzaniso: GD4213Y/ GD4251Y/ GD4251Y-A/ GD42121Y

Tsanangudzo Pfupi

Iyo 850nm Si PIN photodiode module ine pre-amplification wedunhu iyo inogonesa isina simba yazvino chiratidzo kuti ikwidziridzwe uye ichichinjire kune voltage siginecha kuti iwane shanduko yephoton-photoelectric-signal amplification.


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Technical Parameter

Product Tags

Features

  • High-speed mhinduro
  • Kunzwa kwakanyanya

Applications

  • Laser fuse

Photoelectric parameter (@Ta=22±3℃)

chinhu #

Package category

Diameter ye photosensitive surface (mm)

Responsivity

Kusimuka nguva

(ns)

Dynamic range

(dB)

 

Operating voltage

(V)

 

Noise voltage

(mV)

 

Notes

λ=850nm,φe=1μW

λ=850nm

GD4213Y

TO-8

2

110

12

20

±5±0.3

12

-

GD4251Y

2

130

12

20

±6±0.3

40

(Angle yezviitiko: 0 °, transmittance ye830nm ~ 910nm ≥90%

GD4251Y-A

10 × 1.5

130

18

20

±6±0.3

40

GD42121Y

10 × 0.95

110

20

20

±5±0.1

25

Notes: Muyedzo weGD4213Y ndeye 50Ω, mamwe mamwe ari 1MΩ

 

 


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